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SCH2408 rev.0 i page 1 of 4 i www.onsemi.com features 1.5v drive. composite type with 2 mosfets contained in a single package, facilitating high-density mounting. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit drain-to-source voltage v dss 30 v gate-to-source voltage v gss 10 v drain current (dc) i d 0.35 a drain current (pulse) i dp pw 10 s, duty cycle 1% 1.4 a allowable power dissipation p d when mounted on ceramic substrate (900mm 2 ? 0.8mm) 1unit 0.6 w channel temperature tch 150 c storage temperature tstg - -55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 30 v zero-gate voltage drain current i dss v ds =30v, v gs =0v 1 a gate-to-source leakage current i gss v gs = 8v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =100 a 0.4 1.3 v forward transfer admittance ? yfs ? v ds =10v, i d =200ma 360 600 ms r ds (on)1 i d =200ma, v gs =4v 0.75 1.0 ? static drain-to-source on-state resistance r ds (on)2 i d =100ma, v gs =2.5v 0.9 1.3 ? r ds (on)3 i d =10ma, v gs =1.5v 1.8 3.6 ? input capacitance ciss v ds =10v, f=1mhz 28 pf output capacitance coss v ds =10v, f=1mhz 6.0 pf reverse transfer capacitance crss v ds =10v, f=1mhz 3.1 pf marking : lh continued on next page. ordering number : ena1198 SCH2408 n-channel silicon mosfet general-purpose switching device applications ? 2011, scillc. all rights reserved. jan-2011, rev. 0 www.onsemi.com publication order number: SCH2408/d
SCH2408 rev.0 i page 2 of 4 i www.onsemi.com continued from preceding page. ratings parameter symbol conditions min typ max unit t urn-on delay time t d (on) see specified test circuit. 17.5 ns rise time t r see specified test circuit. 34.2 ns t urn-off delay time t d (off) see specified test circuit. 104 ns fall time t f see specified test circuit. 55.5 ns t otal gate charge qg v ds =10v, v gs =4v, i d = 350ma 0.87 nc gate-to-source charge qgs v ds =10v, v gs =4v, i d = 350ma 0.39 nc gate-to-drain ?iller?charge qgd v ds =10v, v gs =4v, i d = 350ma 0.14 nc diode forward voltage v sd i s =350ma, v gs =0v 0.86 1.2 v package dimensions electrical connection unit : mm (typ) 7028-006 switching time test circuit 1.6 1.6 1.5 0.05 0.5 0.05 0.56 0.25 0.2 0.2 1 3 2 64 5 1 : source1 2 : gate1 3 : drain2 4 : source2 5 : gate2 6 : drain1 sanyo : sch6 pw=10 s d.c. 1% p. g 50 ? g s d i d =200ma r l =75 ? v dd =15v v out SCH2408 v in 4v 0v v in r g r g =1.2k ? 654 123 1 : source1 2 : gate1 3 : drain2 4 : source2 5 : gate2 6 : drain1 t op view
SCH2408 rev.0 i page 3 of 4 i www.onsemi.com i d -- v ds i d -- v gs drain-to-source voltage, v ds -- v drain current, i d -- ma gate-to-source voltage, v gs -- v r ds (on) -- v gs r ds (on) -- ta static drain-to-source on-state resistance, r ds (on) -- ? gate-to-source voltage, v gs -- v static drain-to-source on-state resistance, r ds (on) -- ? ambient temperature, ta -- c drain current, i d -- ma it11711 it11712 it11709 it11710 1 0 1.0 0 0.5 0 0 00.20.40 .6 0.8 1.0 0 150 100 50 350 300 250 200 8.0v 6.0v 5.0v 4.0v 2.5v 2.0v 100 80 60 40 20 200 180 160 140 120 1.0 1.5 2.0 2.5 -- 2 5 c 25 c ta= 75 c v ds =10v 2345678 1.5 2.5 3.0 3.5 0.5 2.0 4.0 1.0 0 1.5 2.5 3.0 0.5 2.0 t a=25 c 10ma 100ma i d =200ma -- 4 0 -- 6 0 -- 2 0 0 2 0 4 06080 100 120 160 140 v gs =2.5v, i d =100ma v gs =1.5v, i d =10ma v gs =4.0v, i d = 2 00ma v gs =1.5v sw time -- i d ciss, coss, crss -- v ds ? y fs ? -- i d drain current, i d -- m a switching time, sw time -- ns drain current, i d -- m a forward transfer admittance, ? y fs ? -- ms drain-to-source voltage, v ds -- v ciss, coss, crss -- pf i s -- v sd diode forward voltage, v sd -- v source current, i s -- ma 030 10 15 20 25 5 it11716 10 100 1000 23 5 723 5 7 1.0 7 10 5 3 2 7 100 5 3 2 it11715 it11714 it11713 1.0 100 10 10 23 57 100 22 357 357 1000 7 5 3 2 1000 7 5 3 2 3 2 0.8 1.0 0.6 1.2 1.4 0.2 0.4 0 1.0 100 10 7 5 3 2 7 5 3 2 1000 7 5 3 2 t f t r crss coss ciss v ds =10v t a= - -25 c 75 c 25 c 10 100 7 5 7 3 3 2 2 v gs =0v f=1mhz 25 c -- 2 5 c ta= 75 c t d (off) t d (on) v ds =15v v gs =4v
SCH2408 rev.0 i page 4 of 4 i www.onsemi.com v gs -- qg t otal gate charge, qg -- nc gate-to-source voltage, v gs -- v a s o drain-to-source voltage, v ds -- v drain current, i d -- a 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 4.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 it11717 v ds =10v i d =350ma it13628 p d -- ta ambient temperature, ta -- c allowable power dissipation, p d -- w 0 0 20 40 0.2 0.4 0.6 0.8 60 80 100 120 140 160 when mounted on ceramic substrate (900mm 2 ? 0.8mm) 1unit it13629 0.1 1.0 10 23 57 23 57 23 5 0.1 0.001 0.01 2 3 3 5 1.0 2 3 5 7 7 2 3 5 7 2 100ms dc operation (ta=25 c) 10ms i dp =1.4a i d = 0.35 a 1ms operation in this area is limited by r ds (on). 100 s pw 10 s t a=25 c single pulse when mounted on ceramic substrate (900mm 2 ? 0.8mm) 1uni t SCH2408/d

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on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc reserve s the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any partic ular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitatio n special, consequential or incidental damages. scillc strives to supply high-quality high-reliability products and recommends adopting safety measures when designing equipment to avoid accidents or m alfunctions. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. "typical" parameter s which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including "typic als," must be validated for each customer application by customer? technical experts. scillc shall not be held liable for any claim or suits with regard to a third party? intellectual property rights which has resulted from the use of the technical information and products mentioned above. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any o ther application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or u nauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affi liates, and distributors harmless against all claims, costs, damages, and expen ses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affi rmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner.

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